Browsing by Issue Date, starting with "2015-03-05"

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SINGLE CRYSTAL COPPER, MANUFACTURING METHOD THEREOF AND SUBSTRATE COMPRISING THE SAME
(2015-03-05)
CHEN Chih
;
TU King-Ning
;
LU Chia-Ling
The present invention relates to a single crystal copper having [100] orientation and a volume of 0.1˜4.0×106 μm3. The present invention further provides a manufacturing method for the single crystal copper and a substrate comprising the same.
Single-input multiple-output visible light optical wireless communications supporting quality of service
(2015-03-05)
Chen, Shih-Hao
;
Chow, Chi-Wai
;
光電工程學系
;
Department of Photonics
Visible light optical wireless communication supporting single-input multiple-output quality of service (QoS) by using an indoor light-emitting diode, a mobile-phone camera and a photodetector is proposed and demonstrated for the first time. The proposed system can support two fixed-rate QoS transmissions for two different applications. By employing the rolling shutter effect of the mobile-phone camera, the data rate of the first data link can be greatly enhanced. The experimental result shows that the proposed system can support the first data link operated at 300 bit/s by using a mobile-phone camera and the second data link at 38.4 kbit/s by using a photodetector.
SECRET COMMUNICATION METHOD WITH SELF-AUTHENTICATION CAPABILITY
(2015-03-05)
LEE CHE-WEI
;
TSAI WEN-HSIANG
A secret communication method with a self-authentication capability is provided, which comprises steps of dividing a secret message into a plurality of secret segments; converting each of the secret segments into (k+1) shares, wherein k is a positive integer; embedding the shares into a media carrier; selecting every k shares among the (k+1) ones to compute (k+1) copies in value; and checking if the (k+1) copies in value are the same. If the (k+1) copies in value are the same, then the secret message is shown. Otherwise, at least one mark will be utilized to replace the secret message while the part of the secret message which is not falsified can still be correctly shown. By employing the method, the integrity and fidelity of the hidden secret message can thus be verified, thereby achieving a new covert communication process performing both information hiding and self-authentication capability.
Hybrid Dendrimer/Semiconductor Nanostructures with Efficient Energy Transfer via Optical Waveguiding
(2015-03-05)
Lin, T. N.
;
Huang, J. C.
;
Shen, J. L.
;
Chu, C. M.
;
Yeh, J. M.
In this study, we demonstrated a nonradiative energy transfer between InGaN quantum wells (QWs) and polyamidoamine (PAMAM) dendrimers through optical waveguiding by detecting a reduction in the photoluminescence lifetime. The maximum energy transfer efficiency of this system is similar to 72%, which is promising for sensor applications. The energy transfer efficiency depends on the distance between the InGaN QWs and PAMAM dendrimers by a factor of 1/d(2), revealing layer-to-layer dipole interactions. Upon increasing the generation of PAMAM dendrimers, the transfer energy efficiency increases exponentially, which can be explained by the increased surface coverage for the higher generation.
GRAPHITE OXIDE AND GRAPHENE PREPARATION METHOD
(2015-03-05)
WEI Kung-Hwa
;
DANG Van Thanh
A graphite oxide and/or graphene preparation method includes providing a plasma electrolytic apparatus, wherein an electrolyte is provided and a graphite electrode is configured as a cathode of the plasma electrolytic apparatus; and providing a cathodic current so as to initiate a plasma electrolytic process at the graphite electrode to obtain graphite oxide and/or graphene. The graphite oxide and/or graphene can be synthesized through plasma electrolytic processing at relatively low temperature under atmospheric pressure within a very short period of time, without the need for concentrated acids or strong oxidizing agents. The present invention may prepare graphite oxide and/or graphene with plasma electrolytic process directly from graphite, without requiring any prior purification or pretreatment. This plasma electrolytic process of the present invention is quite promising and provided with advantages such as low cost, simple setup, high efficiency, and environmental friendliness.
Efficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodes
(2015-03-05)
Tzou, An-Jye
;
Lin, Bing-Cheng
;
Lee, Chia-Yu
;
Lin, Da-Wei
;
Liao, Yu-Kuang
Crack-free GaN-based light-emitting diodes (LEDs) were grown on 150-mm-diameter Si substrates by using low-pressure metal-organic chemical vapor deposition. The relationship between the LED devices and the thickness of quantum barriers (QBs) was investigated. The crystal quality and surface cracking of GaN-on-Si were greatly improved by an AlxGa1-xN buffer layer composed of graded Al. The threading dislocation density of the GaN-on-Si LEDs was reduced to < 7 x 10(8) cm(-2), yielding LEDs with high internal quantum efficiency. Simulation results indicated that reducing the QB thickness improved the carrier injection rate and distribution, thereby improving the droop behavior of the LEDs. LEDs featuring 6-nm-thick QBs exhibited the lowest droop behavior. However, the experimental results showed an unanticipated phenomenon, namely that the peak external quantum efficiency (EQE) and light output power (LOP) gradually decreased with a decreasing QB thickness. In other words, the GaN-on-Si LEDs with 8-nm-thick QBs exhibited low droop behavior and yielded a good peak EQE and LOP, achieving a 22.9% efficiency droop and 54.6% EQE. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Direct Observation of the Solvent Effects on the Low-Lying ne and pi pi* Excited Triplet States of Acetophenone Derivatives in Thermal Equilibrium
(2015-03-05)
Narra, Sudhakar
;
Shigeto, Shinsuke
;
應用化學系
;
應用化學系分子科學碩博班
;
Department of Applied Chemistry
Low-lying excited triplet states of aromatic carbonyl compounds exhibit diverse photophysical and photochemical properties of fundamental importance. Despite tremendous effort in studying those triplet states, the effects of substituents and solvents on the energetics of the triplet manifold and on photoreactivity remain to be fully understood. We have recently studied the ordering of the low-lying n pi* and pi pi* excited triplet states and its substituent dependence in acetophenone derivatives using nanosecond time-resolved near-IR (NIR) spectroscopy. Here we address the other important issue, the solvent effects, by directly observing the electronic bands in the NIR that originate from the lowest n pi* and pi pi* states of acetophenone derivatives in four solvents of different polarity (n-heptane, benzene, acetonitrile, and methanol). The two transient NIR bands decay synchronously in all the solvents, indicating that the lowest n pi* and pi pi* states are in thermal equilibrium irrespective of the solvent polarity studied here. We found that the pi pi* band increases in intensity relative to the n pi* band as solvent polarity increases. These results are compared with the photoreduction rate constant for the acetophenone derivatives in the solvents to which 2-propanol was added as a hydrogen-atom donor. Based on the present findings, we present a comprehensive, solvent- and substituent-dependent energy level diagram of the low-lying n pi* and pi pi* excited triplet states.
Donor-acceptor conjugated polymers based on multifused ladder-type arenes for organic solar cells
(2015-03-07)
Wu, Jhong-Sian
;
Cheng, Sheng-Wen
;
Cheng, Yen-Ju
;
Hsu, Chain-Shu
;
應用化學系
Harvesting solar energy from sunlight to generate electricity is considered as one of the most important technologies to address the future sustainability of humans. Polymer solar cells (PSCs) have attracted tremendous interest and attention over the past two decades due to their potential advantage to be fabricated onto large area and light-weight flexible substrates by solution processing at a lower cost. PSCs based on the concept of bulk heterojunction (BHJ) configuration where an active layer comprises a composite of a p-type (donor) and an n-type (acceptor) material represents the most useful strategy to maximize the internal donor-acceptor interfacial area allowing for efficient charge separation. Fullerene derivatives such as [ 6,6]-phenyl-C-61or 71-butyric acid methyl ester (PCBM) are the ideal n-type materials ubiquitously used for BHJ solar cells. The major effort to develop photoactive materials is numerously focused on the ptype conjugated polymers which are generally synthesized by polymerization of electron-rich donor and electron-deficient acceptor monomers. Compared to the development of electron-deficient comonomers (acceptor segments), the development of electron-rich donor materials is considerably flourishing. Forced planarization by covalently fastening adjacent aromatic and heteroaromatic subunits leads to the formation of ladder-type conjugated structures which are capable of elongating effective conjugation, reducing the optical bandgap, promoting intermolecular pi-pi interactions and enhancing intrinsic charge mobility. In this review, we will summarize the recent progress on the development of various well-defined new ladder-type conjugated materials. These materials serve as the superb donor monomers to prepare a range of donor-acceptor semiladder copolymers with sufficient solution-processability for solar cell applications.
"Optimal detection angle in sub-diffraction resolution photothermal microscopy: application for high sensitivity imaging of biological tissues": reply
(2015-03-09)
Miyazaki, Jun
;
Tsurui, Hiromichi
;
Kawasumi, Koshi
;
Kobayashi, Takayoshi
;
電子物理學系
The differences between our model and existing models are rationalized in terms of the experimental conditions. The theory in [Opt. Express 22(16), 18833-18842 (2014)] is applicable when the temperature increase is moderate (similar to 1 K) and the spatial extend of refractive index being modulated is comparable to or smaller than the wavelength, which are in accordance with our experiment. (C) 2014 Optical Society of America
Charge transport in amorphous Hf0.5Zr0.5O2
(2015-03-09)
Islamov, D. R.
;
Perevalov, T. V.
;
Gritsenko, V. A.
;
Cheng, C. H.
;
Chin, A.
In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed. (C) 2015 AIP Publishing LLC.
Method of manufacturing semiconductor device
(2015-03-10)
Liu Po-Tsun
;
Wang Wei-Ya
;
Teng Li-Feng
The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.
Apparatus for identifying falls and activities of daily living
(2015-03-10)
Yang Bing-Shiang
;
Wang Chih-Chung
;
Liao Sain-Ting
The present invention provides and apparatus for distinguishing falls from activities of daily living (ADLs). First, the human movements and muscle activities would be obtained by an electromyography measuring unit and/or an inertia measuring unit to record ADLs, and falls would be distinguished from ADLs to trigger the protecting devices in time to prevent or decrease injury. In addition, the apparatus would be preset for different operational conditions to adapt different users by a setting unit to increase accuracy. Finally, the moving distance and the direction of the user would be obtained by the electromyography measuring unit and/or the inertia measuring unit to obtain the location thereof in an interior space.
Overexpression of an Outer Membrane Protein Associated with Decreased Susceptibility to Carbapenems in Proteus mirabilis
(2015-03-10)
Tsai, Yi-Lin
;
Wang, Min-Cheng
;
Hsueh, Po-Ren
;
Liu, Ming-Che
;
Hu, Rouh-Mei
Proteus mirabilis isolates commonly have decreased susceptibility to imipenem. Previously, we found P. mirabilis hfq mutant was more resistant to imipenem and an outer membrane protein (OMP) could be involved. Therefore, we investigated the role of this OMP in carbapenem susceptibility. By SDS-PAGE we found this OMP (named ImpR) was increased in hfq mutant and LC-MS/MS revealed it to be the homologue of Salmonella YbfM, which is a porin for chitobiose and subject to MicM (a small RNA) regulation. We demonstrated that ImpR overexpression resulted in increased carbapenem MICs in the laboratory strain and clinical isolates. Chitobiose induced expression of chb (a chitobiose utilization operon). Real-time RT-PCR and SDS-PAGE were performed to elucidate the relationship of hfq, impR, chb and MicM in P. mirabilis. We found MicM RNA was decreased in hfq mutant and chbBC-intergenic region (chbBC-IGR) overexpression strain (chbIGRov), while impR mRNA was increased in hfq mutant, micM mutant and chbIGRov strain. In addition, mutation of hfq or micM and overexpression of chbBC-IGR increased ImpR protein level. Accordingly, chitobiose made wild-type have higher levels of ImpR protein and are more resistant to carbapenems. Hfq- and MicM-complemented strains restored wild-type MICs. Mutation of both impR and hfq eliminated the increase in carbapenem MICs observed in hfq mutant and ImpR-complementation of hfq/impR double mutant resulted in MICs as hfq mutant, indicating that the ImpR-dependent decreased carbapenem susceptibility of hfq mutant. These indicate MicM was antisense to impR mRNA and was negatively-regulated by chbBC-IGR. Together, overexpression of ImpR contributed to the decreased carbapenem susceptibility in P. mirabilis.
Silicon-based dual ARROW power splitters with remote coupling
(2015-03-10)
Hsu, Hsin-Feng
;
Hsu, Ming-Shun
;
Lu, Ming-Feng
;
Huang, Yang-Tung
;
生物科技學系
In this research, Si-based power splitters based on dual antiresonant reflecting optical waveguides (ARROW) with remote coupling by a separation distance of 30 mu m were designed and realized. Characterization of the power splitters with different lengths of the coupling region was performed. Measurement characteristics of fabricated devices with the propagation losses lower than 1.90 dB/cm and the imbalances lower than 0.60 dB show that our dual ARROW power splitters can be efficiently realized. (C) 2015 Optical Society of America
光源量測系統及其配光曲線量測方法
(2015-03-11)
田仲豪
;
陳柏宇
;
蔡玉麟
本發明係揭露一種光源量測系統及其配光曲線量測方法，藉由平面光場(輝度分布)與配光曲線(光強度分布)間的可轉換演算的特性，透過導光板先將光源的配光曲線轉換為平面的光場分布，再根據由影像擷取裝置所取得之平面光場分布進一步透過該轉換演算重建其配光曲線，如此，本發明僅需一次曝光即可獲取光源的輝度分布資訊，且藉由導光板、光擴散膜、影像擷取裝置等即可建立一成本低廉的量測系統，進一步地，本發明更可適用於多組光源裝置的同時量測，進而提高量測系統的效率。
基於腹部肌群機能之個人化腹式呼吸訓練評估方法與其系統
(2015-03-11)
蕭子健
;
詹珮姍
本發明提出一種基於腹部肌群機能之個人化腹式呼吸訓練評估系統及方法，可客觀評估腹式呼吸效益。第一及第二感測單元用以取得多個腹部及多個胸部呼吸訊號。一資訊擷取單元根據該多個腹部及該胸部呼吸訊號而分別產生使用者腹部及胸部呼吸波形。一資料解構單元消除該腹部及胸部呼吸波形中的雜訊，以分別產生一腹部及一胸部訊號。一評估分析單元依據該腹部及該胸部訊號，計算該腹部訊號及該胸部訊號之一相關係數、一1/2胸部訊號最大及最小擴張值、及一腹部訊號最大及最小值區間長度值，並產生使用者腹部最大運動能力。
獨立閘極控制靜態隨機存取記憶體
(2015-03-11)
莊景德
;
陳盈年
;
謝建宇
;
范銘隆
;
胡璧合
本發明提供一種靜態隨機存取記憶體，為七顆鰭狀電晶體架構，其使用獨立閘極超高臨界電壓的鰭狀場效電晶體，達到類似堆疊性質以消除讀取干擾以及半選取干擾，同時使用保持電路和讀取電壓控制，來降低讀取時位元線上的漏電流。再者，能有效解決先前技術使用六顆電晶體的SRAM架構，操作於較低電壓下，容易發生讀取錯誤的問題。
包含有具優選方向成長之ＣｕＳｎ晶粒之電性連接結構及其製備方法
(2015-03-11)
陳智
;
林漢文
本發明係有關於一種包含有具優選方向成長之Cu6Sn5晶粒之電性連接結構及其製備方法。本發明之電性連接結構之製備方法，包括步驟：(A)提供一第一基板；(B)於第一基板之部分表面形成一第一奈米雙晶銅層；(C)使用一銲料將第一基板與一第二基板連接，第二基板具有一第二電性墊，第二電性墊包括第二奈米雙晶銅層，且銲料係配置於第一及第二奈米雙晶銅層之間；以及(D)以200℃至300℃的溫度進行迴焊(reflow)使銲料部分轉換為一介金屬化合物(intermetallic compound,IMC)層，且介金屬化合物層係包括具優選方向(preferred orientation)成長之Cu6Sn5晶粒；其中，第一及第二奈米雙晶銅層之50%以上的體積係分別包括雙晶銅晶粒。
多功能控制照明裝置
(2015-03-11)
莊仁輝
;
鄧文治
本發明係揭露一種多功能控制照明裝置，包含一同步分離器、一參數設定裝置、一視訊處理器與一發光裝置，同步分離器連接一攝影機與參數設定裝置，參數設定裝置再與發光裝置連接。同步分離器接收攝影機傳來之一視訊訊號，以擷取其中之同步訊號輸出至參數設定裝置，使其依據至少一種照明參數產生其對應之一電訊號，並將其傳送至發光裝置。最後，發光裝置則依據電訊號向攝影機之一攝影方向發射亮度呈週期性變化之一光線，以於攝影機端得到各種明暗程度不同的曝光影像，可避免遠處人物曝光不足，近處人物過曝情形並提升影像品質。
液晶透鏡結構及其電控液晶眼鏡結構
(2015-03-11)
陳宏山
;
林怡欣
本發明係揭露一種液晶透鏡結構及其電控液晶眼鏡結構。液晶透鏡結構包含一第一電極層、一複合層、一第二電極層及一第三電極層。複合層包含一第一配向層、一第一液晶層、一複合薄膜層、一第二液晶層及一第二配向層。第一配向層係位於第一電極層上。第一液晶層係位於第一配向層上。複合薄膜層係包含一液晶及一高分子材料，複合薄膜層係位於第一液晶層上。第二液晶層係位於複合薄膜層上。第二配向層係位於第二液晶層上。第二電極層係位於第二配向層上。第三電極層係位於第二電極層上。其中，第一配向層與第二配向層之配向方向係為相互垂直，且複合薄膜層中之液晶與高分子材料之配向方向係為相互垂直。