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Showing results 3 to 8 of 8 < previous 
Issue DateTitleAuthor(s)
1-Jan-2011Electron-Boson Coupling Constant of Oxygen-Deficient Y(0.7)Ca(0.3)Ba(2)Cu(3)O(7-delta) Measured by Ultrafast SpectroscopyLuo, C. W.; Chen, J. -Y.; Huang, T. C.; Wu, K. H.; Lin, J. -Y.; Juang, J. Y.; Uen, T. M.; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
1-Jan-2011Electron-Boson Coupling Constant of Oxygen-Deficient Y0.7Ca0.3Ba2Cu3O7-delta Measured by Ultrafast SpectroscopyLuo, C. W.; Chen, J. -Y.; Huang, T. C.; Wu, K. H.; Lin, J. -Y.; Juang, J. Y.; Uen, T. M.; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
18-Dec-2018Electronic structure investigation of a charge density wave coupled to a metal-to-metal transition in Ce3Co4Sn13Singh, A.; Huang, H. Y.; Chin, Y. Y.; Liao, Y. F.; Huang, T. C.; Okamoto, J.; Wu, W. B.; Lin, H. J.; Tsuei, K. D.; Wang, R. P.; de Groot, F. M. F.; Kuo, C. N.; Liu, H. F.; Lue, C. S.; Chen, C. T.; Huang, D. J.; Chainani, A.; 電子物理學系; Department of Electrophysics
12-Dec-2012A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivationYu, M. H.; Liao, M. H.; Huang, T. C.; Wang, L. T.; Lee, T. L.; Jang, S. M.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The Strained-SiGe Relaxation Induced Underlying Si Defects Following the Millisecond Annealing for the 32 nm PMOSFETsYu, M. H.; Wang, L. T.; Huang, T. C.; Lee, T. L.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Ultrafast dynamics in oxygen-deficient Y(0.7)Ca(0.3)Ba(2)Cu(3)O(7-delta) superconductorsLuo, C. W.; Huang, T. C.; Wu, K. H.; Juang, J. Y.; Lin, J-Y; Uen, T. M.; Kobayashi, T.; 電子物理學系; Department of Electrophysics
Showing results 3 to 8 of 8 < previous