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公開日期標題作者
1-十一月-2001The novel polymer electrolyte nanocomposite composed of poly(ethylene oxide), lithium triflate and mineral clayChen, HW; Chang, FC; 應用化學系; Department of Applied Chemistry
1-六月-2002Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2)Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-六月-2002Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using Zr(O-i-Pr)(2)(thd)(2) and O-2Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-八月-2002Solid-state electrolyte nanocomposites based on poly(ethylene oxide), poly(oxypropylene) diamine, mineral clay and lithium perchlorateChen, HW; Chiu, CY; Wu, HD; Shen, IW; Chang, FC; 應用化學系; Department of Applied Chemistry
1-十二月-2001A spread spectrum clock generator for EMI reductionChen, HW; Wu, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2003Structure and thermal stability of MOCVD ZrO2 films on Si (100)Wu, X; Landheer, D; Graham, MJ; Chen, HW; Huang, TY; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
15-四月-2003Trace determination of nitrated polycyclic aromatic hydrocarbons using liquid chromatography with on-line electrochemical reduction and fluorescence detectionKuo, CT; Chen, HW; Lin, ST; 環境工程研究所; Institute of Environmental Engineering
1-七月-2003Ultrathin zirconium silicate films deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2), Si(O(t)-Bu)(2)(thd)(2), and nitric oxideChen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Kim, JK; Lennard, WN; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-七月-2001X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxideChen, HW; Landheer, D; Chao, TS; Hulse, JE; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 21 到 29 筆資料，總共 29 筆 < 上一頁