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公開日期標題作者
15-七月-2009The geometric effect and programming current reduction in cylindrical-shaped phase change memoryLi, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Cheng, Hui-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2011Hydrothermally Roughened Surface-Enhanced Raman Scattering-Active Substrates with Low Background Signals for Chemical Sensing ApplicationYang, Jung-Yen; Cheng, Hui-Wen; Chen, Yu; Li, Yiming; Lin, Chi-Hung; Lu, Kuang-Lieh; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-七月-2011Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETsLi, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-一月-2011Investigation of Raman enhancement in hydrothermally roughened SERS-active substratesCheng, Hui-Wen; Li, Yiming; Yang, Jung-Yen; 電機工程學系; Department of Electrical and Computer Engineering
2008Morphology effect on field emission property of carbon nanotube emitters in triode structureCheng, Hui-Wen; Yeh, Ta-Ching; Kuo, Yi-Ting; Li, Yiming; Lin, Chen-Chun; Pan, Fu-Ming; Chiang, Mei-Tsao; Lo, Kuo-Chung; Mo, Chi-Neng; 電信工程研究所; Institute of Communications Engineering
1-七月-2011Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-kappa/metal gate bulk FinFET devicesLi, Yiming; Cheng, Hui-Wen; Yiu, Chun-Yen; Su, Hsin-Wen; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-四月-2011Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor Devices and Digital CircuitsLi, Yiming; Cheng, Hui-Wen; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-七月-2008Numerical simulation of field emission efficiency of anodic aluminum oxide carbon nanotube field emitter in the triode structureLi, Yiming; Cheng, Hui-Wen; 電信工程研究所; Institute of Communications Engineering
1-一月-2015Numerical Simulation of Field Enhancement Property of Surface Enhanced Raman Spectroscopy Active SubstratesCheng, Hui-Wen; Li, Yiming; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
2012On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-TrapsLi, Yiming; Su, Hsin-Wen; Chen, Chieh-Yang; Cheng, Hui-Wen; Chen, Yu-Yu; Chang, Han-Tung; 資訊工程學系; Department of Computer Science
1-十一月-2009Optimal Configuration of Hydrogen-Embrittlement-Fabricated Nanogaps for Surface-Conduction Electron-Emitter DisplayLi, Yiming; Cheng, Hui-Wen; 傳播研究所; 電子工程學系及電子研究所; Institute of Communication Studies; Department of Electronics Engineering and Institute of Electronics
1-五月-2010Optimization on configuration of surface conduction electron-emittersCheng, Hui-Wen; Li, Yiming; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
2-一月-2019PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBECheng, Hui-Wen; Lin, Shen-Chieh; Li, Zong-Lin; Sun, Kien-Wen; Lee, Chien-Ping; 應用化學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
1-三月-2009Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devicesLi, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen; 電信工程研究所; Institute of Communications Engineering
2009Propagation Delay Dependence on Channel Fins and Geometry Aspect Ratio of 16-nm Multi-Gate MOSFET InverterCheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
1-一月-2011Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFETLi, Yiming; Cheng, Hui-Wen; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-四月-2012Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-kappa/Metal Gate Complementary Metal-Oxide-Semiconductor Device and Inverter CircuitLi, Yiming; Cheng, Hui-Wen; 電機資訊學士班; Undergraduate Honors Program of Electrical Engineering and Computer Science
2012Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-kappa/Metal Gate Bulk and SOI FinFETsSu, Hsin-Wen; Chen, Yu-Yu; Chen, Chieh-Yang; Cheng, Hui-Wen; Chang, Han-Tung; Li, Yiming; 電機工程學系; Department of Electrical and Computer Engineering
2010Random Work Function Variation Induced Threshold Voltage Fluctuation in 16-nm Bulk FinFET Devices with High-kappa-Metal-Gate MaterialCheng, Hui-Wen; Li, Yiming; 傳播研究所; Institute of Communication Studies
1-五月-2012Random Work-Function-Induced Threshold Voltage Fluctuation in Metal-Gate MOS Devices by Monte Carlo SimulationLi, Yiming; Cheng, Hui-Wen; 電機資訊學士班; Undergraduate Honors Program of Electrical Engineering and Computer Science
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