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公開日期標題作者
七月-2016Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistorsShrestha, Niraj M.; Li, Yiming; Chang, E. Y.; 材料科學與工程學系; 資訊工程學系; Department of Materials Science and Engineering; Department of Computer Science
1-三月-2011Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAsLin, Y. C.; Shie, Sheng-Li; Shie, Tin-En; Wong, Yuen-Yee; Chen, K. S.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
2013Thermal Analysis and Electrical Performance of Packaged AlGaN/GaN Power HEMTsChou, Po-Chien; Cheng, Stone; Chieng, Wei-Hua; Chang, E. Y.; Chou, Hsin-Ping; 機械工程學系; Department of Mechanical Engineering
2014Ti/Al/Ni/Cu Ohmic Contact with Low Contact Resistance and Smooth Surface Morphology for AlGaN/GaN HEMTWong, Y. -Y.; Chang, E. Y.; Chen, Y. -K.; Liu, S. -C.; Lin, Y. -C.; Ma, J. -S.; 材料科學與工程學系; Department of Materials Science and Engineering
19-二月-2007Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrateHsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Pilkuhn, M. H.; Tang, S. S.; Chang, C. Y.; Yang, J. Y.; Chung, H. W.; 材料科學與工程學系; Department of Materials Science and Engineering
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