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Showing results 3 to 8 of 8 < previous 
Issue DateTitleAuthor(s)
2015ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATIONTsai, Jung-Ruey; Chang, Yi-Sheng; Wei, Kuo-Shu; Wen, Ting-Ting; 奈米中心; Nano Facility Center
1-Apr-2014Gate-all-around floating-gate memory device with triangular poly-Si nanowire channelsTsai, Jung-Ruey; Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2016Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistorsZhong, Chia-Wen; Lin, Horng-Chih; Tsai, Jung-Ruey; Liu, Kou-Chen; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Apr-2016Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistorsZhong, Chia-Wen; Lin, Horng-Chih; Tsai, Jung-Ruey; Liu, Kou-Chen; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-Oct-2013Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowireLee, Ko-Hui; Tsai, Jung-Ruey; Chang, Ruey-Dar; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD StressTsai, Jung-Ruey; Wen, Ting-Ting; Yang, Shao-Ming; Sheu, Gene; Chang, Ruey-Dar; Syu, Yi-Jhen; Liu, Chin-Ping; Chang, Hsiu-Fu; Wei, Zhao-Hui; 奈米中心; Nano Facility Center
Showing results 3 to 8 of 8 < previous