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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
1-Sep-2004Direct COSi2 thin-film formation with homogeneous nanograin-size distribution by oxide-mediated silicidationChang, JJ; Liu, CP; Chen, SW; Chang, CC; Hsieh, TE; Wang, YL; 材料科學與工程學系; Department of Materials Science and Engineering
1-Apr-2005Formation of pyramid-like nanostructures during cobalt film growth by magnetron sputteringLiu, CP; Chang, JJ; Chen, SW; Chung, HC; Wang, YL; 材料科學與工程學系; Department of Materials Science and Engineering
2001Investigation of the gate dielectric oxidation treatment in trench gate power devicesLin, MJ; Liaw, CE; Chang, JJ; Chang, FL; Hsu, CCH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
24-Jan-2005Modified polycrystalline silicon chemical-vapor deposition process for improving roughness at oxide/polycrystalline silicon interfaceChang, JJ; Hsieh, TE; Wang, YL; Tseng, WT; Liu, CP; Lan, CY; 材料科學與工程學系; Department of Materials Science and Engineering
24-Feb-2006The study of diffusion and nucleation for COSi2 formation by oxide-mediated cobalt silicidationChang, JJ; Liu, CP; Hsieh, TE; Wang, YL; 材料科學與工程學系; Department of Materials Science and Engineering
1-Sep-2005Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti cappingChang, JJ; Liu, CP; Hsieh, TE; Wang, YL; 材料科學與工程學系; Department of Materials Science and Engineering
1-Mar-2006Uniform COSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layerChang, JJ; Hsieh, TE; Liu, CP; Wang, YL; 材料科學與工程學系; Department of Materials Science and Engineering
Showing results 1 to 7 of 7