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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
1-Sep-1995ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFFFAN, JC; LEE, CP; HWANG, JA; HWANG, JH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1995ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFFFAN, JC; LEE, CP; HWANG, JA; HWANG, JH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1995COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAASTSANG, JS; LEE, CP; FAN, JC; TSAI, KL; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-May-1992DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPYLIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering
1-Feb-1995EFFECTS OF LOW-TEMPERATURE-GROWN GAAS LAYER ON COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICESTSANG, JS; LEE, CP; FAN, JC; LEE, SH; TSAI, KL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Sep-1992INFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLSTSAI, KL; CHANG, KH; LEE, CP; HUANG, KF; CHANG, Y; FAN, JC; LIU, DG; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jan-1993TRANSMISSION ELECTRON-MICROSCOPY STUDY OF HEAVILY DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXYLIU, DG; FAN, JC; LEE, CP; CHANG, KH; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 7 of 7