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Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
1-Dec-1996Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrierChai, CY; Huang, JA; Lai, YL; Wu, JW; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1996Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrierChai, CY; Huang, JA; Lai, YL; Wu, JW; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-Apr-1996High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5PChai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
12-May-1997Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructuresLin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
12-May-1997Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructuresLin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
Showing results 1 to 5 of 5