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Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
21-Aug-1995ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONTSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC; 電控工程研究所; Institute of Electrical and Control Engineering
1-Apr-1994CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering
15-Oct-1994CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONJUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering
1-Aug-1994EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURESLIN, HC; LIN, HY; CHANG, CY; JUNG, TG; WANG, PJ; DENG, RC; LIN, JD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1994EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMSLIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY; 電控工程研究所; Institute of Electrical and Control Engineering
26-Sep-1994FABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONLIN, HC; JUNG, TG; LIN, HY; CHANG, CY; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering
1-Jan-1994LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONJUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering
1-Apr-1994NANOMETER THICK SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; WANG, PJ; LEE, TL; CHEN, LJ; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1-Dec-1994QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; CHEN, PA; TSAI, WC; WANG, PJ; CHEN, YF; PAN, SC; 電控工程研究所; Institute of Electrical and Control Engineering
Showing results 1 to 9 of 9