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Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
1-Jan-2000Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCyLuo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jul-1999Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealingLuo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2003The design and assembly of surface-micromachined optical switch for optical add/drop multiplexer applicationLin, YC; Chiou, JC; Lin, WT; Lin, YJ; Wu, SD; 電控工程研究所; Institute of Electrical and Control Engineering
1-Oct-2000Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealingHuang, JC; Luo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-Nov-1999Effects of Mo-free C40Ti(Si1-xGex)(2) precursors and the thickness of an interposed Mo layer on the enhanced formation of C54Ti(Si1-xGex)(2)Luo, JS; Huang, JC; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1999Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealingLuo, JS; Hang, YL; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1998Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealingLuo, JS; Lin, WT; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2000Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealingLuo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-Sep-1998Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealingChen, DR; Luo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1997Interfacial reactions of the Co/Si1-xGex systemLuo, JS; Lin, WT; Chang, CY; Tsai, WC; Wang, SJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Sep-2002A photonic device compatible process in fabricating tunable Fabry-Perot filterLin, WT; Chiou, JC; Chou, BCS; 電控工程研究所; Institute of Electrical and Control Engineering
1-Jun-2000Pulsed KrF laser annealing of Mo/Si0.76Ge0.24Luo, JS; Lin, WT; Chang, CY; Shih, PS; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1997Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 filmsLuo, JS; Lin, WT; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1997Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 filmsLuo, JS; Lin, WT; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1999Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees CLuo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2005A self-aligned fabrication method of dual comb drive using multilayers SOI process for optical MEMS applicationsLin, WT; Chiou, JC; Tsou, C; 電控工程研究所; Institute of Electrical and Control Engineering
15-Jul-2004Variable optical attenuator using a thermal actuator array with dual shuttersChiou, JC; Lin, WT; 電控工程研究所; Institute of Electrical and Control Engineering
Showing results 1 to 17 of 17