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Issue DateTitleAuthor(s)
1-Feb-1996Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layerChen, YA; Chen, JK; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電控工程研究所; Institute of Electrical and Control Engineering
9-Jul-1998Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : HChen, YA; Wu, YH; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layerChen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layerChen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1997Porous silicon light-emitting diode with tunable colorChen, YA; Chen, BF; Tsay, WC; Laih, LH; Chang, MN; Chyi, JI; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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