Browsing by Author Yu, H. W.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
5-Dec-2014Control of metamorphic buffer structure and device performance of InxGa1-xAs epitaxial layers fabricated by metal organic chemical vapor depositionNguyen, H. Q.; Yu, H. W.; Luc, Q. H.; Tang, Y. Z.; Phan, V. T. H.; Hsu, C. H.; Chang, E. Y.; Tseng, Y. C.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
24-Oct-2011Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxyYu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
6-Dec-2010Effect of substrate misorientation on the material properties of GaAs/Al(0.3)Ga(0.7)As tunnel diodesYu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C.; 材料科學與工程學系; Department of Materials Science and Engineering
6-Dec-2010Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodesYu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2014Growth Parameters Optimization of GaN High Electron Mobility Transistor Structure on Silicon Carbide SubstrateWong, Y. Y.; Huang, S. C.; Huang, W. C.; Lumbantoruan, F.; Chiu, Y. S.; Wang, H. C.; Yu, H. W.; Chang, E. Y.; 台積電與交大聯合研發中心; TSMC/NCTU Joint Research Center
1-Nov-2017Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FETSingh, S. K.; Gupta, A.; Yu, H. W.; Nagarajan, V.; Anandan, D.; Kakkerla, R. K.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2013In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor DepositionNguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics