1. 目前位置：

瀏覽 的方式： 關鍵字 Nonvolatile memory (NVM)

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 5 筆資料，總共 5 筆
公開日期標題作者
1-六月-2017A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data ProcessingChang, Meng-Fan; Lin, Chien-Chen; Lee, Albert; Chiang, Yen-Ning; Kuo, Chia-Chen; Yang, Geng-Hau; Tsai, Hsiang-Jen; Chen, Tien-Fu; Sheu, Shyh-Shyuan; 交大名義發表; 資訊工程學系; National Chiao Tung University; Department of Computer Science
1-十二月-2012Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC ApplicationsTsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
六月-2016A comprehensive study of bipolar operation in resistive switching memory devicesBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
六月-2016A numerical analysis of progressive and abrupt reset in conductive bridging RRAMBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
六月-2016A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr RRAMBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆