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瀏覽 的方式： 關鍵字 Random dopant

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公開日期標題作者
200916奈米矽多重閘極電晶體中隨機摻雜導致之特性擾動及其抑制方法李義明; LI YIMING; 國立交通大學電信工程學系(所)
200816奈米矽多重閘極電晶體中隨機摻雜導致之特性擾動及其抑制方法李義明; LI YIMING; 國立交通大學電信工程學系(所)
1-七月-2011Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETsLi, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-三月-2009Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devicesLi, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen; 電信工程研究所; Institute of Communications Engineering
1-一月-2011Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFETLi, Yiming; Cheng, Hui-Wen; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
2008Reduction of Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS CircuitLi, Yiming; Hwang, Chih-Hong; Yeh, Ta-Ching; Huang, Hsuan-Ming; Li, Tien-Yeh; Cheng, Hui-Wen; 電信工程研究所; Institute of Communications Engineering
1-七月-2006A study of threshold voltage fluctuations of nanoscale double gate metal-oxide-semiconductor field effect transistors using quantum correction simulationLi, Yiming; Yu, Shao-Ming; 資訊工程學系; 電信工程研究所; Department of Computer Science; Institute of Communications Engineering
2010金氧半場效應電晶體在次臨界區的不匹配效應蔡濬澤; 陳明哲; 電子研究所
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