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瀏覽 的方式： 關鍵字 Random dopant fluctuation

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公開日期標題作者
2009Characteristics Variability of Novel Lateral Asymmetry Nano-MOSFETs due to Random Discrete DopantLee, Kou-Fu; Hwang, Chih-Hong; Li, Tien-Yeh; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
11-三月-2015Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopantsHuang, Wen-Tsung; Li, Yiming; 電機工程學系; 電信工程研究所; Department of Electrical and Computer Engineering; Institute of Communications Engineering
1-七月-2011Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETsLi, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
2016Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random DopantsSung, Wen-Li; Chang, Han-Tung; Chen, Chieh-Yang; Chao, Pei-Jung; Li, Yiming; 分子醫學與生物工程研究所; 電機工程學系; 電信工程研究所; Institute of Molecular Medicine and Bioengineering; Department of Electrical and Computer Engineering; Institute of Communications Engineering
2014具梯形通道塊材鰭式場效應電晶體元件及其電路特性擾動之研究黃文聰; Huang, Wen-Tsung; 李義明; Li, Yiming; 電信工程研究所
2012多閘極多通道電晶體特性擾動暨 奈米裂縫場發射特性之研究鄭惠文; Cheng, Hui-Wen; 李義明; Li, Yi-Ming; 電信工程研究所
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