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公開日期標題作者
1-十一月-1999Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interfaceLiu, PT; Chang, TC; Yang, YL; Cheng, YF; Shih, FY; Lee, JK; Tsai, E; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2007Effects of plasma treatment on the high frequency characteristics of Cu/Ta/hydrogen silsesquioxane (HSQ) system and electrical behaviors of Cu/Ta/HSQ/Pt MIM capacitorsHo, Chia-Cheng; Chiou, Bi-Shiou; 電子工程學系及電子研究所; Innovative Packaging Research Center; Department of Electronics Engineering and Institute of Electronics; Innovative Packaging Research Center
1-四月-2004Electromigration in sputtered copper film on plasma-treated hydrogen silsesquioxane dielectricChen, CT; Chiou, BS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2006S-parameters-based high speed signal characterization of Al interconnect on low-k hydrogen silsesquioxane-Si substrateHo, CC; Chiou, BS; 電子工程學系及電子研究所; Innovative Packaging Research Center; Department of Electronics Engineering and Institute of Electronics; Innovative Packaging Research Center
1-十二月-2000Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectricLan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS; 交大名義發表; National Chiao Tung University
顯示 1 到 5 筆資料，總共 5 筆