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公開日期標題作者
六月-2016A comprehensive study of bipolar operation in resistive switching memory devicesBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
六月-2016A numerical analysis of progressive and abrupt reset in conductive bridging RRAMBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
六月-2016A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr RRAMBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2016A numerical study of multi filament formation in metal-ion based CBRAMBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-十二月-2015A stochastic simulation method for the assessment of resistive random access memory retention reliabilityBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-十二月-2015A stochastic simulation method for the assessment of resistive random access memory retention reliabilityBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆