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顯示 1 到 12 筆資料，總共 12 筆
公開日期標題作者
21-八月-1995ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONTSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-1994CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering
15-十月-1994CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONJUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering
1-七月-1994EFFECT OF CROSS-PHASE MODULATION ON OPTICAL-PHASE CONJUGATION IN DISPERSION-SHIFTED FIBERWEN, SF; CHI, S; CHANG, TC; 光電工程學系; Department of Photonics
1-九月-1994EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMSLIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY; 電控工程研究所; Institute of Electrical and Control Engineering
27-六月-1994HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXYCHENG, TM; CHANG, CY; CHANG, TC; HUANG, JH; HUANG, MF; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
4-一月-1990INFORMATION RATE OF MCELIECE PUBLIC-KEY CRYPTOSYSTEMLIN, MC; CHANG, TC; FU, HL; 應用數學系; Department of Applied Mathematics
1-一月-1994LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONJUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-1994NANOMETER THICK SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; WANG, PJ; LEE, TL; CHEN, LJ; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
15-十一月-1995THE NOVEL NONLINEAR DC RESPONSE OF AG THIN-FILMS DEPOSITED ON POROUS SILICON - A FRACTAL MODEL EXPLANATIONYOUNG, TF; KUO, WC; JIANG, IM; CHANG, TC; CHANG, CY; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1-六月-1992A PRECISION ALIGNMENT WITH MOIRE TECHNIQUE AND DIFFERENTIAL-AMPLIFIERCHANG, TC; WU, CW; CHOU, C; 光電工程學系; Department of Photonics
1-十二月-1994QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; CHEN, PA; TSAI, WC; WANG, PJ; CHEN, YF; PAN, SC; 電控工程研究所; Institute of Electrical and Control Engineering
顯示 1 到 12 筆資料，總共 12 筆