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公開日期標題作者
1-十月-2003Low-temperature-processed polycrystalline silicon thin-film transistors using a new two-step crystallization techniqueFan, CL; Chen, MC; Chang, Y; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Modeling finger number dependence on RF noise to 10 GHz in 0.13 mu m node MOSFETs with 80nm gate lengthKing, MC; Lai, ZM; Huang, CH; Lee, CF; Ma, MW; Huang, CM; Chang, Y; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2003A novel two-step annealing technique for the fabrication of high performance low temperature poly-Si TFTsFan, CL; Chen, MC; Chang, Y; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2005A numerical study of dc characteristics of HEMT with p-type delta-doped barrierChang, Y; Kuo, YK; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2004Selective growth of carbon nanotube on scanning probe tips by microwave plasma chemical vapor depositionPan, FM; Liu, YB; Chang, Y; Chen, CY; Tsai, TG; Chang, MN; Sheu, JT; 材料科學與工程學系; Department of Materials Science and Engineering
2010具有高介電質閘極氧化層(二氧化鉿、氧化鑭)之三五族金氧半電容其電性提升之研究盧柏菁; Lu, Po-Ching; 張翼; Chang, Y; 材料科學與工程學系
顯示 1 到 6 筆資料，總共 6 筆