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公開日期標題作者
20052-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicateLin, YH; Chien, CH; Chou, TH; Chao, TS; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET'sChung, SS; Chen, SJ; Yih, CM; Yang, WJ; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2000An anomalous crossover in Vth roll-off for indium-doped nMOSFETsChang, SJ; Chang, CY; Chen, CM; Chou, JW; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2000Characteristics of polysilicon oxides combining N2O nitridation and CMP processesLei, TF; Chen, JH; Wang, MF; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2000Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N-2/N2O annealingChen, JH; Lei, TF; Chen, JH; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2004Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEMAhn, H; Chen, HW; Landheer, D; Wu, X; Chou, LJ; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-四月-1998Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon filmsLei, TF; Cheng, JY; Shiau, SY; Chao, TS; Lai, CS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2002Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)Chen, HW; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; Huang, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-五月-2001Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatmentPan, TM; Lei, TF; Wen, HC; Chao, TS; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-十二月-1999The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)Chao, TS; Chang, SJ; Chien, CH; Lin, HC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si filmPan, TM; Lei, TF; Ko, FH; Chao, TS; Chiu, TH; Lee, YH; Lu, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-2001Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectricsPan, TM; Lei, TF; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-二月-2006Complementary carbon nanotube-gated carbon nanotube thin-film transistorChen, BH; Lin, HC; Huang, TY; Wei, JH; Wang, HH; Tsai, MJ; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-九月-1999A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET'sWang, TH; Chiang, LP; Zous, NK; Hsu, CF; Huang, LY; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2004CoTiO3 high-kappa, dielectrics on HSG for DRAM applicationsChao, TS; Ku, WM; Lin, HC; Landheer, D; Wang, YY; Mori, Y; 奈米中心; Nano Facility Center
1-三月-2006Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectricsLee, YJ; Ho, PT; Yang, WL; Chao, TS; Huang, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-八月-2002A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFETLi, YM; Chao, TS; Sze, SM; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-十二月-2002Effect of CF4 plasma pretreatment on low temperature oxidesChang, TY; Chen, HW; Lei, TF; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2003The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistorsLee, YJ; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1997Effects of floating-gate doping concentration on flash cell performanceHuang, TY; Jong, FC; Lin, HC; Chao, TS; Leu, LY; Young, K; Lin, CH; Chiu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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