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公開日期標題作者
二月-2016The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD MethodHuang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L.; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-九月-2014Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistorsWong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2014Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrateHsiao, Yu-Lin; Wang, Yi-Jie; Chang, Chia-Ao; Weng, You-Chen; Chen, Yen-Yu; Chen, Kai-Wei; Maa, Jer-Shen; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics
四月-2016Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperaturesHuang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
2011以自行研發之有機金屬化學氣相沉積系統成長發光二極體之磊晶結構陳凱崴; Chen, Kai-Wei; 張翼; Edward, Yi Chang; 平面顯示技術碩士學位學程
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