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公開日期標題作者
2010Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Location-Controlled Hydrothermal MethodYang, P. Y.; Wang, J. L.; Tsai, W. C.; Wang, S. J.; Chen, P. C.; Su, N. C.; Lin, J. C.; Lee, I. C.; Chang, C. T.; Wei, Y. C.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015Co-delivery of paclitaxel and cetuximab by nanodiamond enhances mitotic catastrophe and tumor inhibition.Chao, J. I.; Liao, W. S.; Lin, Y. W.; Lin, J.; Cheng, H. C.; Wang, C. C.; Liu, K. K.; Li, Y.; Chen, C.; 生物科技學系; 分子醫學與生物工程研究所; Department of Biological Science and Technology; Institute of Molecular Medicine and Bioengineering
2015Co-delivery of paclitaxel and cetuximab by nanodiamond enhances mitotic catastrophe and tumor inhibition.Chao, J. I.; Liao, W. S.; Lin, Y. W.; Lin, J.; Cheng, H. C.; Wang, C. C.; Liu, K. K.; Li, Y.; Chen, C.; 生物科技學系; 分子醫學與生物工程研究所; Department of Biological Science and Technology; Institute of Molecular Medicine and Bioengineering
2004Controlled density growth of carbon nanotubes and its improvement on field emission propertiesJuan, C. P.; Tsai, C. C.; Chen, K. J.; Hong, W. K.; Lin, K. C.; Hsieh, C. Y.; Wang, W. P.; Lai, R. L.; Cheng, H. C.; Chen, K. H.; Chen, L. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Excimer laser crystallization of a-Si1-xGex thin films and its applications to the low-temperature poly-Si1-xGex TFTsChang, T. K.; Chen, B. T.; Lu, J. H.; Cheng, H. C.; Chu, F. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2008Formation of thin-film transistors with a polycrystalline hetero-structure channel layerJuang, Miin-Horng; Tsai, I-Shen; Jang, S-L; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Growth and Field Emission Characteristics of Pillar-like Carbon Nanotubes Using Co-Ti/Al Co-deposited Catalysts at Low TemperatureChang, C. T.; Lee, C. Y.; Lin, K. C.; Lai, R. L.; Tsai, Wan-Lin; Chien, Yun-Shan; Juan, C. P.; Lee, I. C.; Yang, P. Y.; Wei, I. Z.; Cheng, H. C.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-一月-2010Improved Field Emission Characteristics with different Electrode Materials by forming process in a Quasi-planar Thin Film Field Emission DiodeChang, C. T.; Hsu, Y. Y.; Lin, K. C.; Tsai, Wan-Lin; Chien, Yun-Shan; Juan, C. P.; Lee, I. C.; Yang, P. Y.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
18-十一月-2013Low repetition rate and broad frequency tuning from a grating-coupled passively mode-locked quantum dot laserCheng, H. C.; Wu, Q. Y.; Pan, C. H.; Lee, C. P.; Lin, G.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
12-十二月-2012A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivationYu, M. H.; Liao, M. H.; Huang, T. C.; Wang, L. T.; Lee, T. L.; Jang, S. M.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyondYu, Ming H.; Li, J. H.; Lin, H. H.; Chen, C. H.; Ku, K. C.; Nieh, C. F.; Hisa, H.; Sheu, Y. M.; Tsai, C. W.; Wang, Y. L.; Chu, H. Y.; Cheng, H. C.; Lee, T. L.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012The Strained-SiGe Relaxation Induced Underlying Si Defects Following the Millisecond Annealing for the 32 nm PMOSFETsYu, M. H.; Wang, L. T.; Huang, T. C.; Lee, T. L.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2010Study of ultra-shallow p(+)n junctions formed by excimer laser annealingJuang, Miin-Horng; Lu, C. N.; Jang, S. L.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperatureYang, P. Y.; Lee, I. C.; Chang, C. T.; Lin, K. C.; Wang, J. L.; Cheng, K. J.; Lin, C. C.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics