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公開日期標題作者
2001A 1.75GHz inductor-less CMOS low noise amplifier with high-Q active inductor loadYang, JN; Cheng, YC; Hsu, TY; Hsu, TR; Lee, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-二月-1998Alterable temperature-dependent wavelength shifts in (InP)(2)/(GaP)(2) quantum wellsCheng, YC; Tai, K; Chou, ST; Huang, KF; Tu, SL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-八月-2000Anomalous phosphorus cracker temperature-dependent photoluminescence spectra of InGaP grown by solid source molecular beam epitaxyCheng, YC; Tai, KC; Chou, ST; 光電工程學系; Department of Photonics
10-十二月-1998AuBe Ohmic contacts to p-type ZnTeLan, WH; Lin, WJ; Cheng, YC; Tai, K; Tasi, CM; Wu, PH; Cheng, KH; Chou, ST; Yang, CM; Cheng, YC; Huang, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
2003A design of CMOS broadband amplifier with high-Q active inductorYang, JN; Cheng, YC; Lee, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1999Deuterium effect on stress-induced leakage currentLin, BC; Cheng, YC; Chin, A; Wang, T; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-六月-2004Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursorsKe, WC; Huang, HY; Ku, CS; Yen, KH; Lee, L; Chen, WK; Chou, WC; Lee, MC; Chen, WH; Lin, WJ; Cheng, YC; Cherng, YT; 電子物理學系; Department of Electrophysics
1-六月-2004Improving RF CMOS active inductor by simple loss compensation networkLee, CY; Yang, JN; Cheng, YC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-十月-2004Microphotoluminescence spectra of hillocks in Al0.11Ga0.89N filmsKe, WC; Ku, CS; Huang, HY; Chen, WC; Lee, L; Chen, WK; Chou, WC; Chen, WH; Lee, MC; Lin, WJ; Cheng, YC; Cherng, YI; 電子物理學系; Department of Electrophysics
1998Mobility and oxide breakdown behavior in ultra-this oxide with atomically smooth interfaceCheng, YC; Chen, WJ; Lin, BC; Tsai, C; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2003A novel RF CMOS active inductorYang, JN; Cheng, YC; Lee, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2005Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxyYang, CS; Lai, YJ; Chou, WC; Chen, WK; Lee, MC; Kuo, MC; Lee, J; Shen, JL; Jang, DJ; Cheng, YC; 電子物理學系; Department of Electrophysics
2000Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12uw P-MOSFETChen, C; Chang, CY; Chou, JW; Huang, CT; Lin, KC; Cheng, YC; Lin, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2001Optimization of short channel effect with arsenic halo implant through polysilicon gateChen, CM; Chang, CY; Chou, JW; Cheng, YC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-二月-1998Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxyCheng, YC; Tai, KC; Chou, ST; Huang, KF; Tu, SL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-二月-2001Phosphorus-species-induced band-gap anomaly in InGaP grown by solid-source molecular-beam epitaxyCheng, YC; Chi, S; Huang, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-一月-1999Reduction of spontaneous surface segregation in (InP)(2)/(GaP)(2) quantum wells grown on tilted substratesCheng, YC; Tai, KC; Chou, ST; Huang, KF; Lin, WJ; Lin, ACH; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-十月-2000Temperature and annealing effects on photoluminescence spectra of (InAs)(1)/(GaP)(2) superlattices grown by solid-source molecular beam epitaxyCheng, YC; Chi, S; Chou, ST; Huang, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics