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顯示 1 到 6 筆資料，總共 6 筆
公開日期標題作者
1-八月-2006Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applicationsLee, Cheng-Shih; Lien, Yi-Chung; Chang, Edward Yi; Chang, Huang-Choung; Chen, Szu-Houng; Lee, Ching-Ting; Chu, Li-Hsin; Chang, Shang-Wen; Hsieh, Yen-Chang; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-九月-2006Double delta-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity applicationChu, Li-Hsin; Hsu, Heng-Tung; Chang, Edward-Yi; Lee, Tser-Lung; Chen, Sze-Hung; Lien, Yi-Chung; Chang, Chun-Yen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2007Fabrication of 0.15-mu m Gamma-shaped gate In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs using DUV lithography and tilt dry-etching techniqueLien, Yi-Chung; Chen, Szu-Hung; Chang, Edward Yi; Lee, Ching-Ting; Chu, Li-Hsin; Chang, Chia-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
2006High-performance In0.52Al0.48As/In(0.6)Ga(0.)4As power metamorphic HEMT for Ka-band applicationsChang, Chia-Yuan; Chang, Edward Yi; Lien, Yi-Chung; Miyamoto, Yasuyuki; Chen, Szu-Hung; Chu, Li-Hsin; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2007High-performance In0.52Al0.48As/In0.6Ga0.4As power metamorphic high electron mobility transistor for Ka-band applicationsChang, Chia-Yuan; Chang, Edward Yi; Lien, Yi-Chung; Miyamoto, Yasuyuki; Kuo, Chien-I; Chen, Szu-Hung; Chu, Li-Hsin; 材料科學與工程學系; Department of Materials Science and Engineering
21-八月-2006Thermal stability of Ti/Pt/Cu Schottky contact on InAlAs layerLien, Yi-Chung; Chang, Edward Yi; Chen, Szu-Hung; Chu, Li-Hsin; Chen, Po-Chou; Hsieh, Yen-Chang; 材料科學與工程學系; Department of Materials Science and Engineering
顯示 1 到 6 筆資料，總共 6 筆