1. 目前位置：

瀏覽 的方式： 作者 Chung, Yueh-Ting

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 6 筆資料，總共 6 筆
公開日期標題作者
1-二月-2015Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching MemoryChung, Yueh-Ting; Su, Po-Cheng; Cheng, Yu-Hsuan; Wang, Tahui; Chen, Min-Cheng; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2011A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash MemoryMa, Huan-Chi; Chou, You-Liang; Chiu, Jung-Piao; Chung, Yueh-Ting; Lin, Tung-Yang; Wang, Tahui; Chao, Yuan-Peng; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
六月-2016SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching MemoryChung, Yueh-Ting; Su, Po-Cheng; Lin, Wen-Jie; Chen, Min-Cheng; Wang, Tahui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2012V-t Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation EffectChung, Yueh-Ting; Huang, Tzu-I; Li, Chi-Wei; Chou, You-Liang; Chiu, Jung-Piao; Wang, Tahui; Lee, M. Y.; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009單一電子在SONOS快閃式記憶體中的現象，物理以及特性研究鍾岳庭; Chung, Yueh-Ting; 汪大暉; Wang, Ta-Hui; 電子研究所
2016電阻式記憶體及SONOS快閃式記憶體中介電層缺陷造成之可靠度效應研究鍾岳庭; 汪大暉; Chung, Yueh-Ting; Wang, Tahui; 電子工程學系 電子研究所
顯示 1 到 6 筆資料，總共 6 筆