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公開日期標題作者
1-八月-1997Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen additionChang, KM; Yeh, TH; Deng, IC; Shih, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1997Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen additionChang, KM; Yeh, TH; Deng, IC; Shih, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1999Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatmentChang, KM; Deng, IC; Yeh, TH; Shih, CW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1998The characteristics of chemical vapor deposited amorphous-like tungsten film as a gate electrodeChang, KM; Deng, IC; Shih, CW; Lain, KD; Fu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Fabrication of cantilever type microswitches using surface micromachining technologyChang, KM; Jou, CF; Luo, JJ; Kuo, LY; Deng, IC; Liang, C; Luhmann, NC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1996Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasmaChang, KM; Yeh, TH; Deng, IC; Lin, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-四月-1997Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallizationChang, KM; Yeh, TH; Deng, IC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-四月-1997Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallizationChang, KM; Yeh, TH; Deng, IC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2000A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistanceChang, KM; Deng, IC; Tsai, YP; Wen, CY; Yeh, SJ; Wang, SW; Wang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2006Study of a circularly polarized CPW-fed inductive square slot antennaDeng, IC; Lin, RJ; Chang, KM; Chen, JB; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Suppress copper diffusion through barrier metal-free hydrogen silisequioxane dielectrics by using NH3 plasma treatmentChang, KM; Deng, IC; Yeh, SJ; Yeh, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1999Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatmentChang, KM; Deng, IC; Yeh, SJ; Tsai, YP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1999Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten filmChang, KM; Deng, IC; Lin, HY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1999Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact systemChang, KM; Deng, IC; Yeh, TH; Lain, KD; Fu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallizationChang, KM; Tseng, MH; Deng, IC; Tsai, YP; Yeh, SJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2000Using NH3 plasma treatment to improve the characteristics of hydrogen silsesquioxane for copper interconnection applicationChang, KM; Deng, IC; Yeh, SJ; Tsai, YP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 16 筆資料，總共 16 筆