瀏覽 的方式： 作者 Gismatulin, A. A.
顯示 1 到 5 筆資料，總共 5 筆
| 公開日期 | 標題 | 作者 |
| 16-十二月-2019 | Charge transport mechanism in SiNx-based memristor | Gismatulin, A. A.; Gritsenko, V. A.; Yen, T-J; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 21-一月-2019 | Charge transport mechanism of high-resistive state in RRAM based on SiOx | Gismatulin, A. A.; Kruchinin, V. N.; Gritsenko, V. A.; Prosvirin, I. P.; Yen, T. -J.; Chin, A.; 交大名義發表; National Chiao Tung University |
| 1-七月-2019 | Mechanism of stress induced leakage current in Si3N4 | Gritsenko, V. A.; Gismatulin, A. A.; Baraban, A. P.; Chin, A.; 交大名義發表; National Chiao Tung University |
| 10-六月-2019 | Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films | Volodin, V. A.; Kamaev, G. N.; Gritsenko, V. A.; Gismatulin, A. A.; Chin, A.; Vergnat, M.; 交大名義發表; National Chiao Tung University |
| 1-三月-2019 | Multiphonon trap ionization transport in nonstoichiometric SiNx | Gritsenko, V. A.; Gismatulin, A. A.; Chin, A.; 交大名義發表; National Chiao Tung University |
