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公開日期標題作者
21-六月-2018Halbleitervorrichtung und Verfahren zur Herstellung derselbenCHANG EDWARD YI; LIU SHIH-CHIEN; HUANG CHUNG-KAI; WU CHIA-HSUN; HAN PING-CHENG; LIN YUEH-CHIN; HSIEH TING-EN; Chang, Edward Yi; Liu, Shih-Chien; Huang, Chung-Kai; Wu, Chia-Hsun; Han, Ping-Cheng; Lin, Yueh-Chin; Hsieh, Ting-En
1-一月-2019High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage TechniqueHan, Ping-Cheng; Yang, Chih-Yi; Lee, Ming-Wen; Wu, Jui-Sheng; Wu, Chia-Hsun; Chang, Edward Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-七月-2018High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device ApplicationsWu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2018Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion ImplantationWu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-八月-2019Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device ApplicationsWu, Chia-Hsun; Chen, Jian-You; Han, Ping-Cheng; Lee, Ming-Wen; Yang, Kun-Sheng; Wang, Huan-Chung; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Dee, Chang-Fu; Hamzah, Azrul Azlan; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN HeterostructureHan, Ping-Cheng; Wu, Chia-Hsun; Ho, Yu-Hsuan; Yan, Zong-Zheng; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; International College of Semiconductor Technology
1-六月-2020Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V MeasurementNagarajan, Venkatesan; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei; Chuang, Chia-Wei; Lin, Chuang-Ju; Anandan, Deepak; Wu, Chai-Hsun; Han, Ping-Cheng; Singh, Sankalp Kumar; Tien-Tung Luong; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
顯示 1 到 7 筆資料，總共 7 筆