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公開日期標題作者
13-六月-2007Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wellsChen, J. F.; Hsieh, P. C.; Hsiao, R. S.; Wang, J. S.; Chi, J. Y.; 電子物理學系; Department of Electrophysics
14-十二月-2006The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layersShu, G. W.; Wang, C. K.; Wang, J. S.; Shen, J. L.; Hsiao, R. S.; Chou, W. C.; Chen, J. F.; Lin, T. Y.; Ko, C. H.; Lai, C. M.; 電子物理學系; Department of Electrophysics
15-一月-2010Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layersShu, G. W.; Wang, J. S.; Shen, J. L.; Hsiao, R. S.; Chen, J. F.; Lin, T. Y.; Wu, C. H.; Huang, Y. H.; Yang, T. N.; 電子物理學系; Department of Electrophysics
5-九月-2007Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dotsChen, J. F.; Wang, Y. Z.; Chiang, C. H.; Hsiao, R. S.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, T. W.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-八月-2006Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELsYang, H. P. D.; Hsu, I. C.; Lai, F. I.; Lin, G.; Hsiao, R. S.; Maleev, N. A.; Blokhin, S. A.; Kuo, H. C.; Wang, S. C.; Chi, J. Y.; 光電工程學系; Department of Photonics
5-六月-2006Strain relaxation and induced defects in InAsSb self-assembled quantum dotsChen, J. F.; Hsiao, R. S.; Huang, W. D.; Wu, Y. H.; Chang, L.; Wang, J. S.; Chi, J. Y.; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-九月-2007Wire-like characteristics in stacked InAs/GaAs quantum dot superlattices for optoelectronic devicesChen, T. T.; Chen, Y. F.; Wang, J. S.; Huang, Y. S.; Hsiao, R. S.; Chen, J. F.; Lai, C. M.; Chi, J. Y.; 電子物理學系; Department of Electrophysics
顯示 1 到 7 筆資料，總共 7 筆