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二月-2016The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD MethodHuang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L.; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-一月-2014The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs)Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2015Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistorsHuang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2012The Parasitic Reaction During the MOCVD Growth of AlInN MaterialHuang, Wei-Ching; Wong, Yuen-Yee; Liu, Kusan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
2012利用有機金屬化學氣相沉積成長高功率氮化鋁鎵/氮化鎵高電子遷移率電晶體結構於藍寶石基板謝祁峰; Hsieh, Chi-Feng; 張翼; 馬哲申; Chang, Edward-Yi; Maa, Jer-Shen; 照明與能源光電研究所
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