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公開日期標題作者
1-三月-2011Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability-A Model-Based ApproachFan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010FinFET SRAM Cell Optimization Considering Temporal Variability due to NBTI/PBTI and Surface OrientationHu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2011FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate DielectricsHu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Independently-Controlled-Gate FinFET Schmitt Trigger Sub-threshold SRAMsHsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2012Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMsHsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010史密特觸發器為基礎操作在次臨界區以獨立閘極控制場效鰭狀電晶體之靜態隨機存取記憶體謝建宇; Hsieh, Chien-Yu; 莊景德; Chuang, Ching-Te; 電子研究所
顯示 1 到 6 筆資料，總共 6 筆