1. 目前位置：

瀏覽 的方式： 作者 Hsieh, Y. C.

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 6 筆資料，總共 6 筆
公開日期標題作者
2008An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer LayersChang, Edward Yi; Lin, Yueh-Chin; Hsiao, Yu-Lin; Hsieh, Y. C.; Chang, Chia-Yuan; Kuo, Chien-I; Luo, Guang-Li; 材料科學與工程學系; Department of Materials Science and Engineering
8-一月-2007Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applicationsLin, Y. C.; Yamaguchi, H.; Chang, E. Y.; Hsieh, Y. C.; Ueki, M.; Hirayama, Y.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2009Improved electrochemical performances by carbon nanocapsules as an electrocatalyst support for direct methanol fuel cellsChang, Y. M.; Hsieh, Y. C.; Wu, R. W.; 材料科學與工程學系; Department of Materials Science and Engineering
1-十月-2019Levosimendan shortens action potential duration, decreases alternans threshold and prevents ventricular arrhythmia during therapeutic hypothermia in isolated rabbit heartsHsieh, Y. C.; Li, C. H.; Liao, Y. C.; Lin, J. C.; Weng, C. J.; Lin, S. F.; Huang, J. L.; Wu, T. J.; 分子醫學與生物工程研究所; Institute of Molecular Medicine and Bioengineering
15-九月-2006Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrateHsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Chen, S. H.; Biswas, Dhrubes; Wang, S. Y.; Chang, C. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
19-二月-2007Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrateHsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Pilkuhn, M. H.; Tang, S. S.; Chang, C. Y.; Yang, J. Y.; Chung, H. W.; 材料科學與工程學系; Department of Materials Science and Engineering
顯示 1 到 6 筆資料，總共 6 筆