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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
1-Jun-2005Extraction of substrate parameters for RF MOSFETs based on four-port measurementWu, SD; Huang, GW; Chen, KM; Chang, CY; Tseng, HC; Hsu, TL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2004Hot-carrier effects on power characteristics of SiGeHBTsHuang, SY; Chen, KM; Huang, GW; Tseng, HC; Hsu, TL; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Hsu, TL; Tseng, HC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2005Linearity and power characteristics of SiGeHBTs at high temperatures for RF applicationsChen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2005RF MOSFET characterization by four-port measurementWu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2005A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETsCho, MH; Huang, GW; Wu, LK; Chiu, CS; Wang, YH; Chen, KM; Tsen, HC; Hsu, TL; 電信工程研究所; Institute of Communications Engineering
Showing results 1 to 7 of 7