瀏覽 的方式: 作者 Huang, W. -H.

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公開日期標題作者
1-一月-2016High Performance Complementary Ge Peaking FinFETs by Room Temperature Neutral Beam Oxidation for Sub-7 nm Technology Node ApplicationsLee, Y. -J.; Hong, T. -C.; Hsueh, F. -K.; Sung, P. J.; Chen, C. -Y.; Chuang, S. -S.; Cho, T. -C.; Noda, S.; Tsou, Y. -C.; Kao, K. -H.; Wu, C. -T.; Yu, T. -Y.; Jian, Y. -L.; Su, C. -J.; Huang, Y. -M.; Huang, W. -H.; Chen, B. -Y.; Chen, M. -C.; Huang, K. -P.; Li, J. -Y.; Chen, M. -J.; Li, Y.; Samukawa, S.; Wu, W. -F.; Huang, G. -W.; Shieh, J. -M.; Tseng, T. -Y.; Chao, T. -S.; Wang, Y. -H.; Yeh, W. -K.; 電子物理學系; 電子工程學系及電子研究所; 電機工程學系; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-十一月-2013A high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic thin filmZhang, G. -Y.; Zheng, H. -R.; Huang, W. -H.; Zhang, X. -Y.; Gao, D. -L.; Zhang, H.; Zhang, P. -X.; Tseng, T. -Y.; Habermeier, H. -U.; Lin, C. -T.; Cheng, H. -H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014A Novel Junctionless FinFET Structure with Sub-5nm Shell Doping Profile by Molecular Monolayer Doping and Microwave AnnealingLee, Y. -J.; Cho, T. -C.; Kao, K. -H.; Sung, P. -J.; Hsueh, F. -K.; Huang, P. -C.; Wu, C. -T.; Hsu, S. -H.; Huang, W. -H.; Chen, H. -C.; Li, Y.; Current, M. I.; Hengstebeck, B.; Marino, J.; Bueyueklimanli, T.; Shieh, J. -M.; Chao, T. -S.; Wu, W. -F.; Yeh, W. -K.; 電子物理學系; 電機學院; Department of Electrophysics; College of Electrical and Computer Engineering