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1-一月-2015Effective thermal parameters of chalcogenide thin films and simulation of phase-change memoryHuang, Yin-Hsien; Hsieh, Tsung-Eong; 材料科學與工程學系; Department of Materials Science and Engineering
15-十二月-2013Electromigration behaviors of Ge2Sb2Te5 chalcogenide thin films under DC biasHuang, Yin-Hsien; Hang, Chi-Hang; Huang, Yu-Jen; Hsieh, Tsung-Eong; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2018Evaluation of the thermal conductance of flip-chip bonding structure utilizing the measurement based on Fourier's law of heat conduction at steady-stateWu, Chia-Yu; Huang, Yin-Hsien; Wu, Hsin-Han; Hsieh, Tsung-Eong; 材料科學與工程學系; Department of Materials Science and Engineering
7-一月-2015Forming-free, bi-directional polarity conductive-bridge memory devices with Ge2Sb2Te5 solid-state electrolyte and Ag active electrodeHuang, Yin-Hsien; Chen, Hsuan-An; Wu, Hsin-Han; Hsieh, Tsung-Eong; 材料科學與工程學系; Department of Materials Science and Engineering
12-七月-2017A study of electromigration behaviors of Ge2Sb2Te5 chalcogenide nano-strips subjected to pulse biasHuang, Yin-Hsien; Hsieh, Tsung-Eong; 材料科學與工程學系; Department of Materials Science and Engineering
15-六月-2012A study of phase transition behaviors of chalcogenide layers using in situ alternative-current impedance spectroscopyHuang, Yin-Hsien; Huang, Yu-Jen; Hsieh, Tsung-Eong; 材料科學與工程學系; Department of Materials Science and Engineering
2010以3ω法量測相變化薄膜熱傳導性質與其交流阻抗特性之研究黃胤諴; Huang, Yin-Hsien; 謝宗雍; Hsieh, Tsung-Eong; 材料科學與工程學系
2015硫族合金薄膜之電遷移行為及其熱性質對相變化記憶體操作性質之研究黃胤諴; Huang, Yin-Hsien; 謝宗雍; Hsieh, Tsung-Eong; 材料科學與工程學系所
顯示 1 到 8 筆資料，總共 8 筆