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公開日期標題作者
1-一月-2019Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusionWang, Wei; Covi, Erika; Lin, Yu-Hsuan; Ambrosi, Elia; Ielmini, Daniele; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Recommended Methods to Study Resistive Switching DevicesLanza, Mario; Wong, H-S Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic; Belmonte, Attilio; Yang, Yuchao; Puglisi, Francesco M.; Kang, Jinfeng; Magyari-Kope, Blanka; Yalon, Eilam; Kenyon, Anthony; Buckwell, Mark; Mehonic, Adnan; Shluger, Alexander; Li, Haitong; Hou, Tuo-Hung; Hudec, Boris; Akinwande, Deji; Ge, Ruijing; Ambrogio, Stefano; Roldan, Juan B.; Miranda, Enrique; Sune, Jordi; Pey, Kin Leong; Wu, Xing; Raghavan, Nagarajan; Wu, Ernest; Lu, Wei D.; Navarro, Gabriele; Zhang, Weidong; Wu, Huaqiang; Li, Runwei; Holleitner, Alexander; Wurstbauer, Ursula; Lemme, Max C.; Liu, Ming; Long, Shibing; Liu, Qi; Lv, Hangbing; Padovani, Andrea; Pavan, Paolo; Valov, Ilia; Jing, Xu; Han, Tingting; Zhu, Kaichen; Chen, Shaochuan; Hui, Fei; Shi, Yuanyuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2019Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical ModelingWang, Wei; Laudato, Mario; Ambrosi, Elia; Bricalli, Alessandro; Covi, Erika; Lin, Yu-Hsuan; Ielmini, Daniele; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2019Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion-Part II: Compact ModelingWang, Wei; Laudato, Mario; Ambrosi, Elia; Bricalli, Alessandro; Covi, Erika; Lin, Yu-Hsuan; Ielmini, Daniele; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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