1. 目前位置：

瀏覽 的方式： 作者 Kao, Yung-Shin

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 4 筆資料，總共 4 筆
公開日期標題作者
1-五月-2015A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-AssistLu, Chien-Yu; Chuang, Ching-Te; Jou, Shyh-Jye; Tu, Ming-Hsien; Wu, Ya-Ping; Huang, Chung-Ping; Kan, Paul-Sen; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2012A 0.33-V, 500-kHz, 3.94-mu W 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-AssistLu, Chien-Yu; Tu, Ming-Hsien; Yang, Hao-I; Wu, Ya-Ping; Huang, Huan-Shun; Lin, Yuh-Jiun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te; Jou, Shyh-Jye; Hwang, Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
五月-2016A 0.35 V, 375 kHz, 5.43 mu W, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-lineWu, Shang-Lin; Lu, Chien-Yu; Tu, Ming-Hsien; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2017A 0.5-V 28-nm 256-kb Mini-Array Based 6T SRAM With Vtrip-Tracking Write-AssistWu, Shang-Lin; Li, Kuang-Yu; Huang, Po-Tsang; Hwang, Wei; Tu, Ming-Hsien; Lung, Sheng-Chi; Peng, Wei-Sheng; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 4 筆資料，總共 4 筆