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顯示 1 到 7 筆資料，總共 7 筆
公開日期標題作者
1-十一月-1994ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFETCHANG, CY; LIN, CY; CHOU, JW; HSU, CCH; PAN, HT; KO, J; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1-十月-1992APPLICATION OF MULTICRITERIA DECISION-MAKING TO THE EVALUATION OF NEW ENERGY SYSTEM-DEVELOPMENT IN TAIWANTZENG, GH; SHIAU, TA; LIN, CY; 運輸與物流管理系 註：原交通所+運管所; Department of Transportation and Logistics Management
1-十二月-1995A COMPREHENSIVE STUDY OF SUPPRESSION OF BORON PENETRATION BY AMORPHOUS-SI GATE IN P+-GATE PMOS DEVICESLIN, CY; JUAN, KC; CHANG, CY; PAN, FM; CHOU, PF; HUNG, SF; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering
1-七月-1995EFFECT OF OXYGEN IMPURITY ON MICROSTRUCTURE AND BORON PENETRATION IN A BF2+ IMPLANTED LPCVD STACKED AMORPHOUS-SILICON P(+) GATED PMOS CAPACITORLIN, CY; PAN, FM; CHOU, PF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-二月-1995FEATURE MODIFICATION FRAMEWORK FOR FEATURE-BASED DESIGN SYSTEMSLI, RK; LIN, CY; WU, HH; 交大名義發表; 工業工程與管理學系; National Chiao Tung University; Department of Industrial Engineering and Management
1-五月-1993OPTIMAL TILE PARTITION FOR SPACE REGION OF INTEGRATED-CIRCUITS GEOMETRYHSIAO, PY; LIN, CY; SHEW, PW; 資訊工程學系; Department of Computer Science
1-八月-1995SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED P-TYPE GATE MOSFET BY TRAPPING OF FLUORINES IN AMORPHOUS GATELIN, CY; CHANG, CY; HSU, CCH; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
顯示 1 到 7 筆資料，總共 7 筆