1. 目前位置：

瀏覽 的方式： 作者 LOU, YS

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 6 筆資料，總共 6 筆
公開日期標題作者
1-二月-1994A CHARACTERIZATION TECHNIQUE FOR THE DEGRADATION CHARACTERISTICS OF TI/SI SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS AFTER THERMAL SILICIDATIONLOU, YS; WU, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1995THE EFFECTS OF IMPURITY BANDS ON THE ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR OHMIC CONTACTSLOU, YS; WU, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1995LATERAL TITANIUM SILICIDE GROWTH AND ITS SUPPRESSION USING THE A-SI/TI BILAYER STRUCTURELOU, YS; WU, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1993A NEW OXIDATION-RESISTANT COSI2 PROCESS FOR SELF-ALIGNED SILICIDATION (SALICIDE) TECHNOLOGYLOU, YS; WU, CY; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1992THE PROCESS WINDOW OF A-SI/TI BILAYER METALLIZATION FOR AN OXIDATION-RESISTANT AND SELF-ALIGNED TISI2 PROCESSLOU, YS; WU, CY; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1994A SELF-CONSISTENT CHARACTERIZATION METHODOLOGY FOR SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTSLOU, YS; WU, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆