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Browsing by Author Lai, Chao Sung

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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2008Current transport mechanism for HfO2 gate dielectrics with fluorine incorporationWu, Woei Cherng; Lai, Chao Sung; Wang, Tzu Ming; Wang, Jer Chyi; Hsu, Chih Wei; Ma, Ming Wen; Chao, Tien Sheng; 電子物理學系; Department of Electrophysics
2007Dimensional Dependences of the Dynamic-NBTI with 1.2 nm N20-ISSG oxynitridesLai, Chao Sung; Huang, D. C.; Chung, S. S.; 電機學院; College of Electrical and Computer Engineering
2007Electrical and reliability improvement in polyoxide by fluorine implantationKao, Chyuan Haur; Lai, Chao Sung; Lee, Chung Len; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatmentWu, Woei Cherng; Lai, Chao Sung; Wang, Jer Chyi; Chen, Jian Hao; Ma, Ming Wen; Chao, Tien Sheng; 電子物理學系; Department of Electrophysics
2007Nitrogen effects on the integrity of silicon dioxide grown on polycrystalline siliconLai, Chao Sung; Kao, Chyuan Haur; Lee, Chung Len; Lei, Tan Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Polarity asymmetry of polyoxide grown on phosphorus in situ doped polysiliconKao, Chyuan Haur; Lai, Chao Sung; Lee, Chung Len; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Aug-2006Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatmentLai, Chao Sung; Wu, Woei Cherng; Chao, Tien Sheng; Chen, Jian Hao; Wang, Jer Chyi; Tay, Li-Lin; Rowell, Nelson; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 7 of 7