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公開日期標題作者
六月-20163D resistive RAM cell design for high-density storage class memory-a reviewHudec, Boris; Hsu, Chung-Wei; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Wang, Taifang; Frohlich, Karol; Ho, Chia-Hua; Lin, Chen-Hsi; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2015Crossbar array of selector-less TaOx/TiO2 bilayer RRAMChou, Chun-Tse; Hudec, Boris; Hsu, Chung-Wei; Lai, Wei-Li; Chang, Chih-Cheng; Hou, Tuo-Hung; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
25-四月-2014Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memoryHsu, Chung-Wei; Wang, Yu-Fen; Wan, Chia-Chen; Wang, I-Ting; Chou, Chun-Tse; Lai, Wei-Li; Lee, Yao-Jen; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-六月-2016Interface engineered HfO2-based 3D vertical ReRAMHudec, Boris; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Jancovic, Peter; Frohlich, Karol; Micusik, Matej; Omastova, Maria; Hou, Tuo-Hung; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
2015TaOx/TiO2雙氧化層電阻式記憶體於可撓式交錯矩陣結構與三維垂直式結構之應用賴韋利; 侯拓宏; Lai, Wei-Li; Hou, Tuo-Hung; 電子工程學系 電子研究所
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