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公開日期標題作者
1-七月-2016Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substratesLee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo; 電子物理學系; Department of Electrophysics
21-十二月-2016InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire SubstrateKe, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon; 電子物理學系; Department of Electrophysics
31-十月-2018InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrateKe, Wen-Cheng; Chiang, Chih-Yung; Son, Widi; Lee, Fang-Wei; 電子物理學系; Department of Electrophysics
10-三月-2014Optical properties associated with strain relaxations in thick InGaN epitaxial filmsTsai, Wen-Che; Hsu, Chia-He; Fu, Shao-Fu; Lee, Fang-Wei; Chen, Chin-Yu; Chou, Wu-Ching; Chen, Wei-Kuo; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
21-十月-2015Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaNKe, Wen-Cheng; Lee, Fang-Wei; Yang, Cheng-Yi; Chen, Wei-Kuo; Huang, Hao-Ping; 電子物理學系; Department of Electrophysics
2016使用奈米結構改善氮化銦鎵發光元件之光電及結構特性研究李芳葦; 陳衛國; 柯文政; Lee, Fang-Wei; Chen, Wei-Kuo; Ke, Wen-Cheng; 電子物理系所
2009高銦氮化銦鎵薄膜之成長與特性李芳葦; Lee, Fang-Wei; 陳衛國; Chen, Wei-Kuo; 電子物理系所
顯示 1 到 7 筆資料，總共 7 筆