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公開日期標題作者
1-十一月-2004Effects of O-2- and N-2-plasma treatments on copper surfaceChiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2001Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectricWu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxaneChiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrierChiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2004TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrierChiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆