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顯示 1 到 6 筆資料，總共 6 筆
公開日期標題作者
1-七月-2009Flat band voltage control on low V(t) metal-gate/high-kappa CMOSFETs with small EOTChin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. -F.; Su, N. C.; Wang, S. J.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-七月-2009Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOTChin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. -F.; Su, N. C.; Wang, S. J.; 電子工程學系及電子研究所; 光電工程學系; 光電工程研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of EO Enginerring
2006High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function differenceWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Chen, W. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 奈米科技中心; Center for Nanoscience and Technology
1-四月-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gateWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2008Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflectionLiao, C. C.; Chin, Albert; Su, N. C.; Li, M. -F.; Wang, S. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflectionLiao, C. C.; Chin, Albert; Su, N. C.; Li, M. -F.; Wang, S. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆