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公開日期標題作者
四月-2016Investigation of Traps at MoS2/Al2O3 Interface in nMOSFETs by Low-Frequency NoiseYuan, Hui-Wen; Shen, Hui; Li, Jun-Jie; Shao, Jinhai; Huang, Daming; Chen, Yi-Fang; Wang, P. F.; Ding, S. J.; Liu, W. J.; Chin, Albert; Li, Ming-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2017PBTI Investigation of MoS2 n-MOSFET With Al2O3 Gate DielectricYuan, Hui-Wen; Shen, Hui; Li, Jun-Jie; Shao, Jinhai; Huang, Daming; Chen, Yi-Fang; Wang, P. F.; Ding, S. J.; Chin, Albert; Li, Ming-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2016Trapping and Detrapping of Oxide Border Traps in Al2O3 Gate Dielectric in MOS2 n-MOSFETs under PBTI StressYuan, Hui-Wen; Shen, Hui; Li, Jun-Jie; Shao, Jinhai; Huang, Daming; Chen, Yi-Fang; Wang, P. F.; Ding, S. J.; Chin, Albert; Li, Ming-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2007Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devicesWang, Xin Peng; Lim, Andy Eu-Jin; Yu, Hong Yu; Li, Ming-Fu; Ren, Chi; Loh, WeiYip; Zhu, Chun Xiang; Chin, Albert; Trigg, Alastair David; Yeo, Yee-Chia; Biesemans, Serge; Lo, Guo-Qiang; Kwong, Dim-Lee; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 4 筆資料，總共 4 筆