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公開日期標題作者
2007Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistorsWang, M. C.; Chang, T.-C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
9-七月-2007n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metalWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Yeh, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2007Schottky barrier height for the photo leakage current transformation of a-Si : H TFTsWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
3-十二月-2007Source-drain barrier height engineering for suppressing the a-Si : H TFTs photo leakage currentWang, M. C.; Chang, T. C.; Liu, P. T.; Li, Y. Y.; Huang, F. S.; Mei, Y. J.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
6-八月-2007Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metalWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Huang, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
顯示 1 到 5 筆資料，總共 5 筆