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公開日期標題作者
16-九月-1996Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistorChao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-九月-1996Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistorChao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Novel cleaning solutions for polysilicon film post chemical mechanical polishingPan, TM; Lei, TF; Chen, CC; Chao, TS; Liaw, MC; Yang, WL; Tsai, MS; Lu, CP; Chang, WH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2001One-step cleaning solution to replace the conventional RCA two-step cleaning recipe for pregate oxide cleaningPan, TM; Lei, TF; Chao, TS; Liaw, MC; Ko, FH; Lu, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2000Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodologyPan, TM; Lei, TF; Chao, TS; Liaw, MC; Lu, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2002Performance evaluation of cleaning solutions enhanced with tetraalkylammonium hydroxide substituents for post-CMP cleaning on poly-Si filmPan, TM; Lei, TF; Ko, FH; Chao, TS; Liaw, MC; Lee, YH; Lu, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1997Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantationChao, TS; Chien, CH; Hao, CP; Liaw, MC; Chu, CH; Chang, CY; Lei, TF; Sun, WT; Hsu, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 7 筆資料，總共 7 筆