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公開日期標題作者
24-二月-2010Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitrideLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2008Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reductionLin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma TreatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-七月-2013Enhancement of the stability of resistive switching characteristics by conduction path reconstructionHuang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-二月-2009Improved reliability of Mo nanocrystal memory with ammonia plasma treatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer StructureLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile MemoryHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile MemoryHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2011Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory DevicesHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2011Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory DevicesHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 10 筆資料，總共 10 筆