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公開日期標題作者
15-四月-2011Electrode dependence of filament formation in HfO(2) resistive-switching memoryLin, Kuan-Liang; Hou, Tuo-Hung; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-四月-2011Electrode dependence of filament formation in HfO2 resistive-switching memoryLin, Kuan-Liang; Hou, Tuo-Hung; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-三月-2011Evolution of RESET current and filament morphology in low-power HfO(2) unipolar resistive switching memoryHou, Tuo-Hung; Lin, Kuan-Liang; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-三月-2011Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memoryHou, Tuo-Hung; Lin, Kuan-Liang; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2013Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni ElectrodeLin, Kuan-Liang; Hou, Tuo-Hung; Lee, Yao-Jen; Chang, Jhe-Wei; Lin, Jun-Hung; Shieh, Jiann; Chou, Cheng-Tung; Lei, Tan-Fu; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆